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AP9T18GEJ Datasheet N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacturer: Advanced Power Electronics Corp

Download the AP9T18GEJ datasheet PDF. This datasheet also includes the AP9T18GEH variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (AP9T18GEH-AdvancedPowerElectronics.pdf) that lists specifications for multiple related part numbers.

General Description

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

G DS TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rating 20 ±12 40 25 160 31 0.25 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.

Max.

Overview

AP9T18GEH/J Pb Free Plating Product Advanced Power Electronics Corp.

▼ G-S Diode embedded ▼ Capable of 2.

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