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Advanced Power Technology

0910-300M Datasheet Preview

0910-300M Datasheet

RF Transistor

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0910– 300M
300 Watts - 50 Volts, 150µs, 5%
Radar 890 - 1000 MHz
GENERAL DESCRIPTION
The 0910-300M is an internally matched, COMMON BASE transistor capable
of providing 300 Watts of pulsed RF output power at 150 µs pulse width, , 5%
duty factor across the band 900 to 1000 MHz. This hermetically solder-sealed
transistor is specifically designed for P-Band radar applications. It utilizes gold
metallization and diffused emitter ballasting to provide high reliability and
supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
600 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
65 Volts
3.5 Volts
20 Amps
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 200oC
+ 200oC
CASE OUTLINE
55KT, STYLE 1
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS
Pout
Pg
ηc
Rl
Droop
VSWR1
VSWRs
Power Out
Power Gain
Collector Efficiency
Input Return loss
Load Mismatch Tolerance
Droop
Load Mismatch - Stability
Note 1: Pulse condition of 150µsec, 10%.
Freq = 890 – 1000 MHz
Vcc = 50 Volts
Pin = 33 Watts
Pulse Width = 150µs
Duty Factor = 5%
Bvces
Ices
θjc1
Collector to Emitter Breakdown
Collector to Emitter Leakage
Thermal Resistance
Ic = 80 mA
Vce = 50 Volts
Rated Pulse Condition
MIN TYP MAX UNITS
300
425 Watts
9.6
dB
40 45
%
-9
dB
0.5 dB
3:1
2:1
65
Volts
15
mA
0.29 oC/W
0910-300M
Issue Nov 2005
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324




Advanced Power Technology

0910-300M Datasheet Preview

0910-300M Datasheet

RF Transistor

No Preview Available !

Performance Curves
Pin vs. Pout
480
450
420
390
360
330
890 MHz
937 MHz
300
270
1000 MHz
240
210
180
150
120
90
60
30
0
37
38
39 40
41
42
43
44 45
46
47
Pin (dBm)
0910– 300M
0910-300M
Pin vs. Gain
12
11
10
9
8
7
890 MHz
6
937 MHz
5
1000 MHz
4
3
2
1
0
37 38 39 40 41 42 43 44 45 46 47
Pin (dBm)
Pin vs. Efficiency
70.00
60.00
50.00
40.00
30.00
20.00
10.00
890 MHz
937 MHz
1000 MHz
0.00
37 38 39 40 41 42 43 44 45 46 47
Pin (dBm)
Impedance Information
50 Ohms
Input
Matching
Circuit
Output
Matching
Circuit
ZSource
ZLoad
50 Ohms
Frequencies (MHz)
890
937
1000
Note 2: ZLoad exclusive of bias circuit
ZSource ()
1.828 – j3.921
1.895 – j3.67
2.015 – j3.408
ZLoad () 2
1.636-j2.494
1.745 – j2.406
1.911 – j2.387
ADVANCED POWER TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE AT WWW. ADVANCEDPOWER.COM OR CONTACT OUR FACTORY DIRECT.
Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324


Part Number 0910-300M
Description RF Transistor
Maker Advanced Power Technology
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0910-300M Datasheet PDF






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