0910-300M Datasheet | Advanced Power Technology

DESCRIPTION The 0910-300M is an internally matched, MON BASE transistor capable of providing 300 Watts of pulsed RF output power at 150 µs pulse width, , 5% duty factor across the band 900 to 1000 MHz. This hermetically solder-sealed transistor is specifically designed for P-Band radar applications. It utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25o C 600 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current 65 Volts 3.5 Volts 20 Amps Maximum Temperatures Storage Temperature Operating Junction Temperature - 65 to + 200o C + 200o C CASE OUTLINE 55KT, STYLE 1 ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS TEST CONDITIONS Pout Pg ηc Rl Droop VSWR1 VSWRs Power Out Power Gain Collector Efficiency Input Return loss Load Mismatch Tolerance Droop Load Mismatch - Stability Note 1: Pulse condition of 150µsec, 10%. Freq = 890 - 1000 MHz Vcc = 50 Volts Pin = 33 Watts Pulse Width = 150µs Duty Factor = 5% Bvces Ices θjc1 Collector to Emitter Breakdown Collector to Emitter Leakage Thermal Resistance Ic = 80 m A Vce = 50 Volts Rated Pulse Condition MIN TYP MAX UNITS 425 Watts 9.6 d B 40...