Datasheet Details
| Part number | 2N5031 |
|---|---|
| Manufacturer | Advanced Power Technology |
| File Size | 125.59 KB |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Download | 2N5031 Download (PDF) |
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| Part number | 2N5031 |
|---|---|
| Manufacturer | Advanced Power Technology |
| File Size | 125.59 KB |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Download | 2N5031 Download (PDF) |
|
|
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: www.DataSheet4U.com The 2N5031 is a silicon NPN transistor, designed for general purpose small-signal, pre-driver, and driver, applications targeted for military and industrial equipment.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 10 15 3.0 20 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25º C Derate above 25º C 200 1.14 mWatts mW/ º C Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
2N5031 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC= 0.01 mAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 0.01mAdc, IC = 0) Collector Cutoff Current (VCE = 6.0 Vdc, IE = 0 Vdc) Value Min.
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N5031 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | Microsemi Corporation |
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2N5031 | HIGH FREQUENCY TRANSISTOR | Motorola |
| Part Number | Description |
|---|---|
| 2N5109 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| 2N5179 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |