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Advanced Power Technology

APT35GP120JDQ2 Datasheet Preview

APT35GP120JDQ2 Datasheet

POWER MOS 7 IGBT

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TYPICAL PERFORMANCE CURVES
®
APT1325G0P01V20JDQ2
APT35GP120JDQ2
POWER MOS 7® IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• RBSOA Rated
www.DataSheet4U.com
EE
G C SOT-227
ISOTOP®
"UL Recognized"
file # E145592
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT35GP120JDQ2
UNIT
VCES
VGE
I C1
I C2
I CM
RBSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
Reverse Bias Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
±30
64
26
140
140A @ 960V
284
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350µA)
Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 35A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 35A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
MIN TYP MAX Units
1200
3 4.5 6 Volts
3.3 3.9
3
350
3000
µA
±100
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com




Advanced Power Technology

APT35GP120JDQ2 Datasheet Preview

APT35GP120JDQ2 Datasheet

POWER MOS 7 IGBT

No Preview Available !

DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
RBSOA Reverse Bias Safe Operating Area
td(on)
Turn-on Delay Time
tr
td(off)
Current Rise Time
Turn-off Delay Time
tf Current Fall Time
Eon1
Turn-on Switching Energy 4
www.DataSheEeotn42U.coTmurn-on Switching Energy (Diode) 5
Eoff
td(on)
Turn-off Switching Energy 6
Turn-on Delay Time
tr
td(off)
Current Rise Time
Turn-off Delay Time
tf Current Fall Time
Eon1
Eon2
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Eoff Turn-off Switching Energy 6
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 600V
IC = 35A
TJ = 150°C, RG = 4.3Ω, VGE =
15V, L = 100µH,VCE = 960V
Inductive Switching (25°C)
VCC = 600V
VGE = 15V
IC = 35A
RG = 4.3
TJ = +25°C
MIN
140
Inductive Switching (125°C)
VCC = 600V
VGE = 15V
IC = 35A
RG = 4.3
TJ = +125°C
APT35GP120JDQ2
TYP
3240
250
31
7.5
150
21
60
MAX
UNIT
pF
V
nC
16
20
95
40
750
1305
680
16
20
145
75
750
2130
1745
A
ns
µJ
ns
µJ
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RθJC
RθJC
WT
VIsolation
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
MIN
Package Weight
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500
TYP
29.2
MAX
.44
1.10
UNIT
°C/W
gm
Volts
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4
aEdond1inisg
the clamped inductive turn-on energy of the IGBT only,
to the IGBT turn-on loss. Tested in inductive switching
without the effect
test circuit shown
of
in
a commutating diode reverse recovery current
figure 21, but with a Silicon Carbide diode.
5
lEoosns2.
is the
(See
clamped inductive
Figures 21, 22.)
turn-on
energy
that
includes
a
commutating
diode
reverse
recovery
current
in
the
IGBT
turn-on
switching
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained h



Part Number APT35GP120JDQ2
Description POWER MOS 7 IGBT
Maker Advanced Power Technology
Total Page 9 Pages
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