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Advanced Power Technology

APT466FL Datasheet Preview

APT466FL Datasheet

N-CHANNEL ENHANCEMENT MODE RF POWER MOSFETs

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RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
ARF466FL
D
G
S
ARF466FL
200V 300W 45MHz
The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial
RF power amplifier applications up to 45 MHz. It has been optimized for both linear and high efficiency classes of
www.DataSheeot4pUe.rcaotmion.
Specified 150 Volt, 40.68 MHz Characteristics:
Low Cost Flangeless RF Package.
Output Power = 300 Watts.
Low Vth thermal coefficient.
Gain = 16dB (Class AB)
Low Thermal Resistance.
Efficiency = 75% (Class C)
Optimized SOA for Superior Ruggedness.
MAXIMUM RATINGS
Symbol Parameter
VDSS
VDGO
ID
VGS
PD
RθJC
TJ,TSTG
TL
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
All Ratings: TC = 25°C unless otherwise specified.
ARF466FL
UNIT
1000
1000
Volts
13 Amps
±30 Volts
450 Watts
0.30
°C/W
-55 to 175
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
Drain-Source On-State Resistance 1 (VGS = 10V, ID = 6.5A)
IDSS
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
gfs Forward Transconductance (VDS = 25V, ID = 6.5A)
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
MIN TYP MAX UNIT
1000
Volts
0.90 ohms
25
µA
250
±100 nA
3.3 7
9 mhos
2 4 Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com




Advanced Power Technology

APT466FL Datasheet Preview

APT466FL Datasheet

N-CHANNEL ENHANCEMENT MODE RF POWER MOSFETs

No Preview Available !

DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 150V
f = 1 MHz
VGS = 15V
VDD = 500 V
ID = 13A @ 25°C
RG = 1.6
ARF466FL
MIN TYP MAX UNIT
2000
165 pF
75
12
10
ns
43
10
FUNCTIONAL CHARACTERISTICS
www.DataSheet4SUy.cmombol Characteristic
GPS Common Source Amplifier Power Gain
η Drain Efficiency
ψ Electrical Ruggedness VSWR 10:1
Test Conditions
f = 40.68 MHz
VGS = 2.5V VDD = 150V
Pout = 300W
1 Pulse Test: Pulse width < 380µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
MIN TYP MAX UNIT
14 16
dB
70 75
%
No Degradation in Output Power
30
Class C
25
VDD = 150V
Pout = 150W
20
15
10
5
030 45 60 75 90 105 120
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
20
18
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
16
14 TJ = -55°C
12
10
8
6
4 TJ = -55°C
2 TJ = +25°C
0 TJ = +125°C
01 2 3 4 5 6 7 8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
10,000
1000
500
100
50
Ciss
Coss
Crss
10
.1 1 10 100 200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
52
OPERATIONHERE
LIMITED BY RDS (ON)
10
5
100uS
1mS
1
.5
TC =+25°C
TJ =+175°C
SINGLE PULSE
.1
1 10 100 1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
10mS
100mS


Part Number APT466FL
Description N-CHANNEL ENHANCEMENT MODE RF POWER MOSFETs
Maker Advanced Power Technology
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