MMBR911LT1
DESCRIPTION
:
Designed for low noise, wide dynamic range front- end amplifiers and low- noise VCO’s. Available in a surface- mountable plastic package. This small- signal plastic transistor offers superior quality and performance at low cost.
MMBR911LT1 MMBR911LT1G
- G Denotes Ro HS pliant, Pb Free Terminal Finish
FEATURES
:
- High Gain- Bandwidth Product f T = 7.0 GHz (Typ) @ 30 m A
- Low Noise Figure NF = 1.7 d B (Typ) @ 500 MHz
- High Gain GNF = 17 d B (Typ) @ 10 m A/500 MHz
- State- of- the- Art Technology Fine Line Geometry Ion- Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nitride Passivation
- Available in tape and reel packaging options: T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Symbol VCEO VCBO VEBO IC PD(max)
TSTG TJmax
Rating Collector-Emitter Voltage Collector-Base Voltage
Emitter-Base...
