MMBR911LT1G Datasheet | Advanced Power Technology

140 MERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR DESCRIPTION: Designed for low noise, wide dynamic range front- end amplifiers and low- noise VCO’s. Available in a surface- mountable plastic package. This small- signal plastic transistor offers superior quality and performance at low cost. MMBR911LT1 MMBR911LT1G - G Denotes RoHS pliant, Pb Free Terminal Finish Features : - High Gain- Bandwidth Product fT = 7.0 GHz (Typ) @ 30 mA - Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz - High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz - State- of- the- Art Technology Fine Line Geometry Ion- Implanted Arsenic Emitters...