Datasheet Details
| Part number | MMBR911LT1 |
|---|---|
| Manufacturer | Advanced Power Technology |
| File Size | 144.36 KB |
| Description | NPN SILICON HIGH-FREQUENCY TRANSISTOR |
| Datasheet |
 MMBR911LT1 Datasheet
|
|
|
General Description
Designed for low noise, wide dynamic range front
end amplifiers and low
noise VCO’s.
mountable plastic package.
signal plastic transistor offers superior quality and performance at low cost.
G Denotes RoKey Features
- High Gain.
- Bandwidth Product fT = 7.0 GHz (Typ) @ 30 mA.
- Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz.
- High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz.
- State.
- of.
- the.
- Art Technology Fine Line Geometry Ion.
- Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nitride Passivation.
- Available in tape and reel packaging options: T1 suffix = 3,000 units per reel.