Part MMBR911LT1
Description NPN SILICON HIGH-FREQUENCY TRANSISTOR
Category Transistor
Manufacturer Advanced Power Technology
Size 144.36 KB
Advanced Power Technology

MMBR911LT1 Overview

Description

Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package.

Key Features

  • High Gain–Bandwidth Product fT = 7.0 GHz (Typ) @ 30 mA
  • Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz
  • High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz
  • State–of–the–Art Technology Fine Line Geometry Ion–Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nitride Passivation
  • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel