| Part Number | MMBR911LT1 Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBR911LT1/D
The RF Line
NPN Silicon High-Frequency Transistor
Designed for low noise, wide dynamic range front–end amplifiers and low–.
5°C (1) Derate linearly above Tcase = 75°C Storage Temperature Maximum Junction Temperature Symbol VCEO VCBO VEBO IC PD(max) Tstg TJmax Value 12 20 2.0 60 333 4.44 * 55 to +150 150 Unit Vdc Vdc Vdc mA mW mW/°C °C °C THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction to Case Symbol RθJC Val. |
MMBR911LT1 Datasheet and Specifications PDF
The MMBR911LT1 is a NPN Silicon High-Frequency Transistor.
| Part Number | MMBR911LT1 Datasheet |
|---|---|
| Description | NPN SILICON HIGH-FREQUENCY TRANSISTOR |
| Manufacturer | Advanced Power Technology |
| Overview |
Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package. This small–signal plastic transistor offers superior quality and.
* High Gain *Bandwidth Product fT = 7.0 GHz (Typ) @ 30 mA * Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz * High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz * State *of *the *Art Technology Fine Line Geometry Ion *Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nitride Passivation * Availa. |