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MS1251 Datasheet RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

Manufacturer: Advanced Power Technology

Datasheet Details

Part number MS1251
Manufacturer Advanced Power Technology
File Size 211.80 KB
Description RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
Datasheet download datasheet MS1251 Datasheet

General Description

: The MS1251 is an epitaxial silicon NPN planar transistor designed primarily for 12.5 V, Class C VHF communications.

This device utilizes diffused emitter resistors to achieve 20:1 VSWR capability at rated operating conditions.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VCES VEBO IC PDISS TJ T STG Parameter Collector - Base Voltage Collector - Emitter Voltage Collector - Emitter Voltage Emitter - Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 36 18 36 4.0 6.0 145 +200 -65 to +150 Unit V V V V A W °C °C Thermal Thermal Data RTH(J-C) Junction-Case Thermal Resistance 1.2 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Overview

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1251 RF & MICROWAVE TRANSISTORS VHF MOBILE.

Key Features

  • 175 MHz 12.5 VOLTS POUT = 45 WATTS GP = 6.5 dB.