MS1251 Key Features
- 175 MHz 12.5 VOLTS POUT = 45 WATTS GP = 6.5 dB MINIMUM INPUT MATCHED MON EMITTER CONFIGURATION VSWR = 20:1
- Part: MS1251
- Manufacturer: Advanced Power Technology
- Size: 211.80 KB
Related Advanced Power Technology Datasheets
| Part Number | Description |
|---|---|
| MS1252 | RF AND MICROWAVE TRANSISTORS HF - VHF COMMUNICATION APPLICATIONS |
| MS1253 | RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS |
| MS1226 | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
| MS1227 | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
| MS1261 | RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS |
MS1251 Description
The MS1251 is an epitaxial silicon NPN planar transistor designed primarily for 12.5 V, Class C VHF munications. This device utilizes diffused emitter resistors to achieve 20:1 VSWR capability at rated operating conditions. or contact our factory direct.