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MS1253 - RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS

General Description

The MS1253 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications.

This device utilizes emitter ballasting, is extremely stable and capable of withstanding high VSWR under operating conditions.

Key Features

  • 50 MHz 12.5 VOLTS POUT = 70 WATTS Gp = 10 dB.

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Datasheet Details

Part number MS1253
Manufacturer Advanced Power Technology
File Size 139.23 KB
Description RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS
Datasheet download datasheet MS1253 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1253 RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS Features • • • • • 50 MHz 12.5 VOLTS POUT = 70 WATTS Gp = 10 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION : The MS1253 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely stable and capable of withstanding high VSWR under operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO PDISS IC TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation Device Current Junction Temperature Storage Temperature Value 45 18 3.5 183 12.