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MS1251 - RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

General Description

The MS1251 is an epitaxial silicon NPN planar transistor designed primarily for 12.5 V, Class C VHF communications.

This device utilizes diffused emitter resistors to achieve 20:1 VSWR capability at rated operating conditions.

Key Features

  • 175 MHz 12.5 VOLTS POUT = 45 WATTS GP = 6.5 dB.

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Datasheet Details

Part number MS1251
Manufacturer Advanced Power Technology
File Size 211.80 KB
Description RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
Datasheet download datasheet MS1251 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1251 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • • • • • • • 175 MHz 12.5 VOLTS POUT = 45 WATTS GP = 6.5 dB MINIMUM INPUT MATCHED COMMON EMITTER CONFIGURATION VSWR = 20:1 DESCRIPTION: The MS1251 is an epitaxial silicon NPN planar transistor designed primarily for 12.5 V, Class C VHF communications. This device utilizes diffused emitter resistors to achieve 20:1 VSWR capability at rated operating conditions.