Datasheet Details
| Part number | MS1253 |
|---|---|
| Manufacturer | Advanced Power Technology |
| File Size | 139.23 KB |
| Description | RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS |
| Datasheet |
 MS1253 Datasheet
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| Part number | MS1253 |
|---|---|
| Manufacturer | Advanced Power Technology |
| File Size | 139.23 KB |
| Description | RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS |
| Datasheet |
MS1253 Datasheet
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: The MS1253 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications.
This device utilizes emitter ballasting, is extremely stable and capable of withstanding high VSWR under operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO PDISS IC TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation Device Current Junction Temperature Storage Temperature Value 45 18 3.5 183 12.0 200 -65 to +150 Unit V V V W A °C °C Thermal Data RTH(J-C) Thermal Resistance Junction-case 1.05 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1253 RF & MICROWAVE TRANSISTORS HF/VHF.
| Part Number | Description |
|---|---|
| MS1251 | RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS |
| MS1252 | RF AND MICROWAVE TRANSISTORS HF - VHF COMMUNICATION APPLICATIONS |
| MS1226 | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
| MS1227 | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
| MS1261 | RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS |
| MS1262 | RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS |
| MS1263 | RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS |
| MS1281 | RF & Microwave Transistors FM Broadcast Applications |
| MS1000 | RF & MICROWAVE TRANSISTORS |
| MS1001 | RF & MICROWAVE TRANSISTORS |