MS1253 Key Features
- 50 MHz 12.5 VOLTS POUT = 70 WATTS Gp = 10 dB MINIMUM MON EMITTER CONFIGURATION
- Part: MS1253
- Manufacturer: Advanced Power Technology
- Size: 139.23 KB
Related Advanced Power Technology Datasheets
| Part Number | Description |
|---|---|
| MS1251 | RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS |
| MS1252 | RF AND MICROWAVE TRANSISTORS HF - VHF COMMUNICATION APPLICATIONS |
| MS1226 | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
| MS1227 | RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
| MS1261 | RF & MICROWAVE TRANSISTOR UHF MOBILE APPLICATIONS |
MS1253 Description
The MS1253 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for land mobile transmitter applications. This device utilizes emitter ballasting, is extremely stable and capable of withstanding high VSWR under operating conditions. RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO PDISS IC TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation...