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MS2231 - RF AND MICROWAVE TRANSISTORS L-BAND APPLICATIONS

General Description

The MS2231 is a high-power Class C transistor specifically designed for L-Band Radar pulsed driver applications.

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Datasheet Details

Part number MS2231
Manufacturer Advanced Power Technology
File Size 253.65 KB
Description RF AND MICROWAVE TRANSISTORS L-BAND APPLICATIONS
Datasheet download datasheet MS2231 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2231 RF AND MICROWAVE TRANSISTORS L-BAND APPLICATIONS Features • • • • • • • REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT / OUTPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 100 W MIN. GP = 6.0 dB GAIN DESCRIPTION: The MS2231 is a high-power Class C transistor specifically designed for L-Band Radar pulsed driver applications. DataSheet4U.com This device is capable of operation over a wide range of pulse widths, duty cycles, and termperatures and is capable of withstanding 3:1 output WSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.