MS2206 Description
The MS2206 is a mon base, silicon NPN microwave transistor designed for Class C driver applications under DME or IFF pulse . This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. DataShee RATINGS (Tcase = 25° C) Symbol PDISS VCE TJ IC T STG Parameter Power Dissipation Collector-Emitter Bias Voltage Junction Temperature Device Current Storage Temperature Value 7.5 37...
MS2206 Key Features
- 1025-1150 MHz GOLD METALLIZATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS Pout = 4 W MINIMUM GP= 10 dB MON BASE CONFI