1N23WE diode equivalent, silicon mixer diode.
* High burnout resistance
* Low noise figure
* Hermetically sealed package
MAXIMUM RATINGS
IF VR PDISS TJ TSTG
O O
20 mA 1.0 V 5.0 (ERGS) @ TC = 25 C -55 C.
Operating From 8.0 to 12.4 GHz.
PACKAGE STYLE DO- 23
FEATURES:
* High burnout resistance
* Low noise figure
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