Datasheet Summary
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NPN SILICON RF TRANSISTOR
DESCRIPTION:
The 2SC2585 is a mon Emitter Device Designed for Low Niose Amplifier and Medium Power Oscillator Applications up to 8.5 GHz.
PACKAGE STYLE
MAXIMUM RATINGS
IC VCEO VCBO VEB PT TJ TSTG θJC
65 mA 12 V 25 V 1.5 V 400 mW @ TC = 166 C -65 C to +200 C -65 C to +200 C 85 C/W
DIMENSIONS IN MILLIMETERS 1 = BASE 3 = COLLECTOR 2 & 4 = EMITTER
CHARACTERISTICS
SYMBOL
ICBO IEBO hFE ft VCB = 8.0 V VEB = 1.0 V VCE = 8.0 V VCE = 8.0 V VCB = 10 V VCE = 8.0 V
TC = 25 C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
100 100
UNITS
µA µA --GHz ww w.D ata Sh eet 4U .co m
IC = 7.0 mA IC = 20 mA f = 1.0 GHz f = 1.0 MHz IC =...