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2SC2585 - NPN SILICON RF TRANSISTOR

Description

The 2SC2585 is a Common Emitter Device Designed for Low Niose Amplifier and Medium Power Oscillator Applications up to 8.5 GHz.

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Datasheet Details

Part number 2SC2585
Manufacturer Advanced Semiconductor
File Size 51.08 KB
Description NPN SILICON RF TRANSISTOR
Datasheet download datasheet 2SC2585 Datasheet

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www.DataSheet4U.com 2SC2585 NPN SILICON RF TRANSISTOR DESCRIPTION: The 2SC2585 is a Common Emitter Device Designed for Low Niose Amplifier and Medium Power Oscillator Applications up to 8.5 GHz. PACKAGE STYLE MAXIMUM RATINGS IC VCEO VCBO VEB PT TJ TSTG θJC O O 65 mA 12 V 25 V 1.5 V 400 mW @ TC = 166 C -65 C to +200 C -65 C to +200 C 85 C/W O O O O DIMENSIONS IN MILLIMETERS 1 = BASE 3 = COLLECTOR 2 & 4 = EMITTER CHARACTERISTICS SYMBOL ICBO IEBO hFE ft VCB = 8.0 V VEB = 1.0 V VCE = 8.0 V VCE = 8.0 V VCB = 10 V VCE = 8.0 V TC = 25 C O TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 100 100 UNITS µA µA --GHz ww w.D ata Sh eet 4U .co m IC = 7.0 mA IC = 20 mA f = 1.0 GHz f = 1.0 MHz IC = 20 mA f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz 50 115 8.
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