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AT12016-21
SILICON ABRUPT VARACTOR DIODE
DESCRIPTION:
The AT12016-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic.
PACKAGE STYLE 21 FEATURES INCLUDE:
• High Quality Factor, Q = 300 MIN. CP = .20 pF • Hermetic Pkg, LS = .42 nH
• High Tuning Ratio, ∆CT = 9.0 MIN.
MAXIMUM RATINGS
IF VR PDISS TJ TSTG θJC
O O
200 mA 120 V 1.75W @ TC 25 C -55 C to +150 C -55 C to +150 C 70 C/W
NONE
O O O O
CHARACTERISTICS
SYMBOL
VR VF IR CT ∆ CT Q RS IR = 10 µA IF = 1 mA VR = 100 V VR = 4 V CT0/ CT120 VR = 4 V IF = 10 mA
TC = 25 C
O
TEST CONDITIONS
MINIMUM TYPICAL
120
MAXIM
1.0 100
UNITS
V V µA pF -----
f = 1.0 MHz f = 1.0 MHz f = 50 MHz f = 2400 MHz
16 9.0 300
18
20
0.
AT12016-21 Datasheet
