TPV593 transistor equivalent, npn silicon rf power transistor.
INCLUDE:
* Gold Metalization
* Emitter Ballasting
* High Gain
MAXIMUM RATINGS
IC VCB PDISS TJ T STG θ JC 1.2 A 45 V 17.5 W @ TC = 25 OC -55 OC to +200 OC -55.
PACKAGE STYLE .280 4L STUD
FEATURES INCLUDE:
* Gold Metalization
* Emitter Ballasting
* High Gain
MAXIMU.
The ASI TPV593 is a Common Emitter Device Designed for Class A High Linearity Television Band IV and V Transmitter Applications.
PACKAGE STYLE .280 4L STUD
FEATURES INCLUDE:
* Gold Metalization
* Emitter Ballasting
* High Gain
MAXIMUM.
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