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TPV595A - NPN SILICON RF POWER TRANSISTOR

General Description

AB Push Pull, Common Emitter from 470 to 860 MHz Applications.

Ø.130 NOM.

Key Features

  • Gold Metalization Emitter connected to flange F H I J K L M G Base - 2 places.
  • Emitter Ballast Resistors.
  • Internal Input Matching DIM.

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Datasheet Details

Part number TPV595A
Manufacturer Advanced Semiconductor
File Size 15.69 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet TPV595A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPV595A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The TPV595A is Designed for Class AB Push Pull, Common Emitter from 470 to 860 MHz Applications. PACKAGE STYLE .250 BAL FLG .020 x 45° B A Collector - 2 places Ø.130 NOM. .050 x 45° E D C N FEATURES: • Gold Metalization Emitter connected to flange F H I J K L M G Base - 2 places • Emitter Ballast Resistors • Internal Input Matching DIM MINIMUM inches / mm MAXIMUM inches / mm MAXIMUM RATINGS IC VCB PDISS TJ T STG θ JC O A B C .055 / 1.40 .060 / 1.52 .065 / 1.65 .125 / 3.18 .243 / 6.17 .630 / 16.00 .092 / 2.34 .555 / 14.10 .739 / 18.77 .315 / 8.00 .002 / 0.05 .055 / 1.40 .075 1.91 .565 / 14.35 .750 / 19.05 .327 / 8.31 .006 / 0.15 .065 / 1.65 .095 / 2.41 .190 / 4.83 .245 / 6.22 .257 / 6.53 .255 / 6.48 .670 / 17.01 2 x 2.