TRW53601 transistor equivalent, npn silicon rf power transistor.
* Diffused Ballast Resistors
* Omnigold™ Metalization System
* Common Emitter
MAXIMUM RATINGS
IC VCES PDISS TJ TSTG θJC 400 mA 50 V 3.0 W @ TC = 25 °C -65 °.
up to 2.3 GHz.
PACKAGE STYLE
FEATURES:
* Diffused Ballast Resistors
* Omnigold™ Metalization System
* Comm.
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