TRW53601
TRW53601 is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
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NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TRW53601 is Designed for General Purpose Oscillator Applications up to 2.3 GHz.
PACKAGE STYLE
Features
:
- Diffused Ballast Resistors
- Omnigold™ Metalization System
- mon Emitter
MAXIMUM RATINGS
IC VCES PDISS TJ TSTG θJC 400 mA 50 V 3.0 W @ TC = 25 °C -65 °C to +200 °C
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DataShee
-65 °C to +200 °C 31 °C/W
1 = COLLECTOR 2 = EMITTER 3 = BASE
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVCBO BVEBO ICBO hFE COB PO IMD GP VSWR IC = 10 mA IC = 10 mA
TC = 25 °C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
20 50 45 3.5 0.25
UNITS
V V V V mA --pF W dB dB
IC = 1.0 mA IE = 250 µA VCB = 28 V VCE = 5.0...
