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TRW53601 - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI TRW53601 is Designed for General Purpose Oscillator Applications up to 2.3 GHz.

Key Features

  • Diffused Ballast Resistors.
  • Omnigold™ Metalization System.
  • Common Emitter.

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Datasheet Details

Part number TRW53601
Manufacturer Advanced Semiconductor
File Size 208.46 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet TRW53601 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com TRW53601 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TRW53601 is Designed for General Purpose Oscillator Applications up to 2.3 GHz. PACKAGE STYLE FEATURES: • Diffused Ballast Resistors • Omnigold™ Metalization System • Common Emitter MAXIMUM RATINGS IC VCES PDISS TJ TSTG θJC 400 mA 50 V 3.0 W @ TC = 25 °C -65 °C to +200 °C DataSheet4U.com DataShee -65 °C to +200 °C 31 °C/W 1 = COLLECTOR 2 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BVCEO BVCES BVCBO BVEBO ICBO hFE COB PO IMD GP VSWR IC = 10 mA IC = 10 mA TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 20 50 45 3.5 0.25 UNITS V V V V mA --pF W dB dB IC = 1.0 mA IE = 250 µA VCB = 28 V VCE = 5.0 V VCB = 28 V VCE = 20 V PIN = .100 W IE = 120 mA IC = 100 mA f = 1.0 MHz f = 2.0 GHz 15 120 3.5 .