TRW54601
TRW54601 is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
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NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TRW54601 is Designed for General Purpose Oscillator Applications up to 2.3 GHz.
PACKAGE STYLE .280 4L STUD
Features
:
- Diffused Ballast Resistors
- Omnigold™ Metalization System
- mon Emitter
MAXIMUM RATINGS
IC VCES PDISS TJ TSTG θJC 400 mA 50 V 3.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 35 °C/W
1 = COLLECTOR 2 = EMITTER 3 = BASE
DataShee
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CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICBO hFE COB PG VSRW IC = 10 mA IC = 10 mA IE = 1.0 mA VCB = 28 V VCE = 5.0 V VCB = 28 V
TC = 25 °C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
22 50 3.5 0.5
UNITS
V V V mA ---
IC = 100 mA f...
