UHBS30-1 transistor equivalent, npn silicon rf power transistor.
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* Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 9.0 A 50 V 30 V 4.0 V 100 W @ TC = 25 OC -65 OC to +200 OC -65 C to.
The ASI UHBS30-1 is Designed for
PACKAGE STYLE .230 6L FLG
A .040x45° C B 2XØ.130 4X .025 R .115 .430 D E .125 G H I L F
FEATURES:
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* Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 9.0 A 50 V 30 .
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