1N5712 Key Features
- Low Turn-On Voltage As Low as 0.34 V at 1 mA
- Pico Second Switching Speed
- High Breakdown Voltage Up to 70 V
- Matched Characteristics Available
- Part: 1N5712
- Manufacturer: Agilent Technologies
- Size: 48.46 KB
Other 1N5712 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Sunmate |
1N5712 | SMALL SIGNAL SCHOTTKY DIODES |
Avago Technologies |
1N5712 | Schottky Barrier Diodes |
Digitron Semiconductors |
1N5712 | SCHOTTKY RECTIFIERS |
M-Pulse Microwave |
1N5712 | General Purpose Schottky Diodes |
DSI |
1N5712 | DIODE |
1N5712 Description
/Applications The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting, video detecting, frequency discriminating, sampling, and wave shaping. The 5082-2835 is a passivated Schottky diode...