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AM2303E3VR - P-Channel MOSFET

Download the AM2303E3VR datasheet PDF. This datasheet also covers the AM2303 variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The AM2303 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density.

advanced trench technology to provide excellent RDS(ON) low gate charge and operation gate as 2.5V.

Features

  • -30V/-4.3A, RDS(ON) =50mΩ(typ. )@VGS =-10V -30V/-3.5A, RDS(ON) =58mΩ(typ. )@VGS =-4.5V -30V/-2.5A, RDS(ON) =73mΩ(typ. )@VGS =-2.5V Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and Maximum DC current capability.
  • Available in SOT-23 Package This device is suitable for use as a load switch or other general.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AM2303-AiTSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AM2303E3VR
Manufacturer AiT Semiconductor
File Size 444.63 KB
Description P-Channel MOSFET
Datasheet download datasheet AM2303E3VR Datasheet

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Other Datasheets by AiT Semiconductor

Part Number Description
AM2303E3R P-Channel MOSFET
AM2303 P-Channel MOSFET
AM2300 20V N-CHANNEL ENHANCEMENT MODE MOSFET
AM2301 -20V P-CHANNEL ENHANCEMENT MODE MOSFET
AM2304 N-CHANNEL ENHANCEMENT MODE MOSFET MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AiT Semiconductor Inc. www.ait-ic.com AM2303 MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION The AM2303 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON) low gate charge and operation gate as 2.5V. FEATURES     -30V/-4.3A, RDS(ON) =50mΩ(typ.)@VGS =-10V -30V/-3.5A, RDS(ON) =58mΩ(typ.)@VGS =-4.5V -30V/-2.5A, RDS(ON) =73mΩ(typ.)@VGS =-2.5V Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Available in SOT-23 Package This device is suitable for use as a load switch or other general applications.
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