Datasheet4U Logo Datasheet4U.com

AM2303E3VR - P-Channel MOSFET

This page provides the datasheet information for the AM2303E3VR, a member of the AM2303 P-Channel MOSFET family.

Datasheet Summary

Description

The AM2303 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density.

advanced trench technology to provide excellent RDS(ON) low gate charge and operation gate as 2.5V.

Features

  • -30V/-4.3A, RDS(ON) =50mΩ(typ. )@VGS =-10V -30V/-3.5A, RDS(ON) =58mΩ(typ. )@VGS =-4.5V -30V/-2.5A, RDS(ON) =73mΩ(typ. )@VGS =-2.5V Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and Maximum DC current capability.
  • Available in SOT-23 Package This device is suitable for use as a load switch or other general.

📥 Download Datasheet

Datasheet preview – AM2303E3VR

Datasheet Details

Part number AM2303E3VR
Manufacturer AiT Semiconductor
File Size 444.63 KB
Description P-Channel MOSFET
Datasheet download datasheet AM2303E3VR Datasheet
Additional preview pages of the AM2303E3VR datasheet.

📁 Similar Datasheet

  • AM2303 - Digital-output relative humidity & temperature sensor/module (Aosong)
  • AM2303P - P-Channel 20-V (D-S) MOSFET (Analog Power)
  • AM2300 - N-Channel Enhancement Mode MOSFET (AXElite)
  • AM2300N - N-Channel MOSFET (Analog Power)
  • AM2301 - Digital temperature and humidity sensor (Aosong)
  • AM2301 - P-Channel Enhancement Mode MOSFET (AXElite)
  • AM2301P - P-Channel MOSFET (Analog Power)
  • AM2301PE - P-Channel 20-V (D-S) MOSFET (Analog Power)
  • AM2302 - Digital temperature and humidity sensor (Aosong)
  • AM2302 - N-Channel Enhancement Mode MOSFET (AXElite)
Other Datasheets by AiT Semiconductor
  • AM2303E3R - P-Channel MOSFET
  • AM2303 - P-Channel MOSFET
  • AM2300 - 20V N-CHANNEL ENHANCEMENT MODE MOSFET
  • AM2301 - -20V P-CHANNEL ENHANCEMENT MODE MOSFET
  • AM2304 - N-CHANNEL ENHANCEMENT MODE MOSFET MOSFET
  • AM2305 - MOSFET -30V P-CHANNEL ENHANCEMENT MODE
  • AM2306 - -30V N-CHANNEL ENHANCEMENT MODE MOSFET
  • AM2308 - 60V 3.8A N-CHANNEL ENHANCEMENT MODE MOSFET

Full PDF Text Transcription

Click to expand full text
AiT Semiconductor Inc. www.ait-ic.com AM2303 MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION The AM2303 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON) low gate charge and operation gate as 2.5V. FEATURES     -30V/-4.3A, RDS(ON) =50mΩ(typ.)@VGS =-10V -30V/-3.5A, RDS(ON) =58mΩ(typ.)@VGS =-4.5V -30V/-2.5A, RDS(ON) =73mΩ(typ.)@VGS =-2.5V Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Available in SOT-23 Package This device is suitable for use as a load switch or other general applications.
Published: |