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AM2303 - P-Channel MOSFET

General Description

The AM2303 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density.

advanced trench technology to provide excellent RDS(ON) low gate charge and operation gate as 2.5V.

Key Features

  • -30V/-4.3A, RDS(ON) =50mΩ(typ. )@VGS =-10V -30V/-3.5A, RDS(ON) =58mΩ(typ. )@VGS =-4.5V -30V/-2.5A, RDS(ON) =73mΩ(typ. )@VGS =-2.5V Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and Maximum DC current capability.
  • Available in SOT-23 Package This device is suitable for use as a load switch or other general.

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Datasheet Details

Part number AM2303
Manufacturer AiT Semiconductor
File Size 444.63 KB
Description P-Channel MOSFET
Datasheet download datasheet AM2303 Datasheet

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Full PDF Text Transcription (Reference)

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AiT Semiconductor Inc. www.ait-ic.com AM2303 MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION The AM2303 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON) low gate charge and operation gate as 2.5V. FEATURES     -30V/-4.3A, RDS(ON) =50mΩ(typ.)@VGS =-10V -30V/-3.5A, RDS(ON) =58mΩ(typ.)@VGS =-4.5V -30V/-2.5A, RDS(ON) =73mΩ(typ.)@VGS =-2.5V Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Available in SOT-23 Package This device is suitable for use as a load switch or other general applications.