AM2305 Datasheet | AiT Semiconductor

AiT Semiconductor Inc. .ait-ic. MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION The AM2305 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. Features - - - - -30V/-4A, RDS(ON) = 55mΩ@VGS = -10V -30V/-3A, RDS(ON) = 64mΩ@VGS = -4.5V -30V/-2A, RDS(ON) = 85mΩ@VGS = -2.5V Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and Maximum DC current capability - Available in a SOT-23 package. These devices are particularly suited for low voltage...