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AM2305 - MOSFET -30V P-CHANNEL ENHANCEMENT MODE

General Description

The AM2305 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density.

Advanced trench technology to provide excellent RDS(ON).

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • -30V/-4A, RDS(ON) = 55mΩ@VGS = -10V -30V/-3A, RDS(ON) = 64mΩ@VGS = -4.5V -30V/-2A, RDS(ON) = 85mΩ@VGS = -2.5V Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and Maximum DC current capability.
  • Available in a SOT-23 package. These devices are particularly suited for low voltage.

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Datasheet Details

Part number AM2305
Manufacturer AiT Semiconductor
File Size 577.29 KB
Description MOSFET -30V P-CHANNEL ENHANCEMENT MODE
Datasheet download datasheet AM2305 Datasheet

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Full PDF Text Transcription (Reference)

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AiT Semiconductor Inc. www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE AM2305 DESCRIPTION The AM2305 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. FEATURES     -30V/-4A, RDS(ON) = 55mΩ@VGS = -10V -30V/-3A, RDS(ON) = 64mΩ@VGS = -4.5V -30V/-2A, RDS(ON) = 85mΩ@VGS = -2.5V Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Available in a SOT-23 package. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.