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AM2301 - -20V P-CHANNEL ENHANCEMENT MODE MOSFET

General Description

The AM2301 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density.

Advanced trench technology to provide excellent RDS(ON).

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • -20V/-3.2A, RDS(ON)=90mΩ(typ. )@VGS =-4.5V.
  • -20V/-2.0A, RDS(ON)=130mΩ(typ. )@VGS =-2.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and Maximum DC current capability.
  • This is a Green compliance.
  • Available in a SOT-23 package. AM2301 is available in a SOT-23 package.

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Datasheet Details

Part number AM2301
Manufacturer AiT Semiconductor
File Size 335.35 KB
Description -20V P-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet AM2301 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AiT Semiconductor Inc. www.ait-ic.com   AM2301 MOSFET -20V P-CHANNEL ENHANCEMENT MODE DESCRIPTION The AM2301 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package. FEATURES  -20V/-3.2A, RDS(ON)=90mΩ(typ.)@VGS =-4.5V  -20V/-2.0A, RDS(ON)=130mΩ(typ.)@VGS =-2.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  This is a Green compliance  Available in a SOT-23 package.