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AM2301 - -20V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Overview

AiT Semiconductor

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AM2301 -20V P-CHANNEL ENHANCEMENT MODE MOSFET by AiT Semiconductor - Datasheet Preview — Datasheet preview – AM2301

Datasheet Details

Part number	AM2301
Manufacturer	AiT Semiconductor
File Size	335.35 KB
Description	-20V P-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet	AM2301 Datasheet
Additional preview pages of the AM2301 datasheet.

Product details

Description

The AM2301 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density.

Advanced trench technology to provide excellent RDS(ON).

This high density process is especially tailored to minimize on-state resistance.

Features

-20V/-3.2A, RDS(ON)=90mΩ(typ. )@VGS =-4.5V.
-20V/-2.0A, RDS(ON)=130mΩ(typ. )@VGS =-2.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and Maximum DC current capability.
This is a Green compliance.
Available in a SOT-23 package. AM2301 is available in a SOT-23 package.

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Published: Jun 6, 2015 |