AM2306
Description
The AM2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density.
Key Features
- 30V/3.6A, RDS(ON)= 45mΩ(typ.)@VGS= 10V
- 30V/2.8A, RDS(ON)= 55mΩ(typ.)@VGS= 4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and Maximum DC current capability
- Available in a SOT-23 package
