100V/50A,RDS(ON)=5.8mΩ@VGS=10V 100V/20A,RDS(ON)=8.5mΩ@VGS=5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application Power Supply .

Pin Description ( TO-220-3L ) Features 100V/50A,RDS(ON)=5.8mΩ@VGS=10V 100V/20A,RDS(ON)=8.5mΩ@VGS=5V Super high density.

AFN1500S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFN1501S

AFN1510S

AFN1520

AFN1530

AFN1010S

AFN1012

AFN1012E

AFN1024

AFN1024E

AFN1026S

AFN1032

AFN1032E

AFN1034