Datasheet4U Logo Datasheet4U.com

AFN1010S Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology AFN1010S 100V N-Channel Enhancement Mode MOSFET.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFN1010S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial applications.

Pin Description ( TO-220-3L )

Key Features

  • z 100V/15A,RDS(ON)= 9mΩ@VGS=10V z 100V/10A,RDS(ON)=13mΩ@VGS=4.5V z Super high density cell design for low RDS (ON) z TO-220-3L package design.

More Datasheets from Alfa-MOS

Part Number Description
AFN1012 N-Channel MOSFET
AFN1012E N-Channel MOSFET
AFN1024 N-Channel MOSFET
AFN1024E N-Channel MOSFET
AFN1026S N-Channel MOSFET
AFN1032 N-Channel MOSFET
AFN1032E N-Channel MOSFET
AFN1034 N-Channel MOSFET
AFN1034E N-Channel MOSFET
AFN1055S N-Channel Enhancement Mode MOSFET

AFN1010S Distributor