Datasheet4U Logo Datasheet4U.com

AFN1010S - N-Channel Enhancement Mode MOSFET

Download the AFN1010S datasheet PDF. This datasheet also covers the AFN1010S-Alfa variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN1010S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial applications.

Key Features

  • z 100V/15A,RDS(ON)= 9mΩ@VGS=10V z 100V/10A,RDS(ON)=13mΩ@VGS=4.5V z Super high density cell design for low RDS (ON) z TO-220-3L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN1010S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN1010S
Manufacturer Alfa-MOS
File Size 387.57 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN1010S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AFN2308AS23RG N-Channel 60V MOSFET VBsemi
AFND1208U1 512Mbit (64M x 8-Bit)NAND FLASH ATO
AFND1G08U3 1G-bit NAND FLASH ATO

Other Datasheets by Alfa-MOS

Part Number Description
AFN1012 N-Channel MOSFET
AFN1012E N-Channel MOSFET
AFN1024 N-Channel MOSFET
AFN1024E N-Channel MOSFET
AFN1026S N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology AFN1010S 100V N-Channel Enhancement Mode MOSFET General Description AFN1010S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial applications. Pin Description ( TO-220-3L ) Features z 100V/15A,RDS(ON)= 9mΩ@VGS=10V z 100V/10A,RDS(ON)=13mΩ@VGS=4.5V z Super high density cell design for low RDS (ON) z TO-220-3L package design Application z Power Supply - Secondary Synchronous Rectification z DC/DC converter z DC/AV inverter z Power tools z Motor drive switch Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No.