AFN1010S Description
AFN1010S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial applications. Pin Description ( TO-220-3L.
AFN1010S Key Features
- Secondary Synchronous Rectification z DC/DC converter z DC/AV inverter z Power tools z Motor drive switch