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AFN1012E Datasheet N-channel MOSFET

Manufacturer: Alfa-MOS

Overview: Alfa-MOS Technology General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

AFN1012E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.

Pin Description ( SOT-523 ) AFN1012E 20V N-Channel Enhancement Mode MOSFET

Key Features

  • 20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.5A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.4A,RDS(ON)=560mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected SOT-523 package design.

More Datasheets from Alfa-MOS

Part Number Description
AFN1012 N-Channel MOSFET
AFN1010S N-Channel Enhancement Mode MOSFET
AFN1024 N-Channel MOSFET
AFN1024E N-Channel MOSFET
AFN1026S N-Channel MOSFET
AFN1032 N-Channel MOSFET
AFN1032E N-Channel MOSFET
AFN1034 N-Channel MOSFET
AFN1034E N-Channel MOSFET
AFN1055S N-Channel Enhancement Mode MOSFET

AFN1012E Distributor