AFN1012E - N-Channel MOSFET

Product Overview

Alfa-MOS

Part number	AFN1012E
Manufacturer	Alfa-MOS
File Size	586.77 KB
Description	N-Channel MOSFET
Datasheet	AFN1012E Datasheet
Note	This datasheet PDF includes multiple part numbers: AFN1012E, AFN1012E-Alfa. Please refer to the document for exact specifications by model.
Additional preview pages of the AFN1012E datasheet.

AFN1012E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.5A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.4A,RDS(ON)=560mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected SOT-523 package design.

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Published: Dec 10, 2018 |