Alfa-MOS AFN1012
N-Channel MOSFET
| Part No. | AFN1012 |
|---|---|
| Datasheet | AFN1012 Download |
| Manufacturer |  Alfa-MOS |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
AFN1012, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. PinDESCRIPTION
( SOT-523 ) AFN1012 20V N-Channel Enhancement Mode MOSFETFEATURES
20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.5A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.4A,RDS(ON)=560mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-523 package design Application Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Smart Phones, Pagers Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN1012S52RG X SOT-523 ϡʳ AFN1012S52RG :
