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AFN1026S - N-Channel MOSFET

Download the AFN1026S datasheet PDF. This datasheet also covers the AFN1026S-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN1026S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • 60V/0.5A , RDS(ON)=2.4Ω@VGS=10V 60V/0.2A , RDS(ON)=3.0Ω@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection ( >2KV ) Diode design.
  • in SOT-563 package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN1026S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN1026S
Manufacturer Alfa-MOS
File Size 533.91 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN1026S Datasheet

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Other Datasheets by Alfa-MOS

Part Number Description
AFN1024 N-Channel MOSFET
AFN1024E N-Channel MOSFET
AFN1010S N-Channel Enhancement Mode MOSFET
AFN1012 N-Channel MOSFET
AFN1012E N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology AFN1026S 60V N-Channel Enhancement Mode MOSFET 1jGeneral Description AFN1026S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-563 ) Features 60V/0.5A , RDS(ON)=2.4Ω@VGS=10V 60V/0.2A , RDS(ON)=3.0Ω@VGS=4.