AFN1026S Datasheet | Alfa-MOS

Alfa-MOS Technology 60V N-Channel Enhancement Mode MOSFET 1jGeneral Description AFN1026S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-563 ) Features 60V/0.5A , RDS(ON)=2.4Ω@VGS=10V 60V/0.2A , RDS(ON)=3.0Ω@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection ( >2KV ) Diode design- in SOT-563 package...