AFN1520 mosfet equivalent, n-channel enhancement mode mosfet.
100V/4.0A,RDS(ON)= 320mΩ@VGS=10V 100V/4.0A,RDS(ON)= 340mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design
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100V/4.0A,RDS(ON)= 320mΩ@VGS=10V 100V/4.0A,RDS(ON)= 340mΩ@VGS=4.5V Super high density cell design for extreme.
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