AFN1530 Datasheet | Alfa-MOS

Alfa-MOS Technology 100V N-Channel Enhancement Mode MOSFET General Description AFN1530, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Features 100V/15A,RDS(ON)= 115mΩ@VGS=10V 100V/12A,RDS(ON)= 125mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Pin Description ( TO-220-3L ) Application High Frequency Boost Converter LED Backlight for LCD TV Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part...