AFN2326S mosfet equivalent, n-channel enhancement mode mosfet.
* 150V/1.5A,RDS(ON)=320mΩ@VGS=10V
* 150V/1.4A,RDS(ON)=340mΩ@VGS=6V
* Super high density cell design for extremely
low RDS (ON)
* Exceptional on-resistance.
Pin Description ( SOT-23-3L )
AFN2326S
150V N-Channel Enhancement Mode MOSFET
Features
* 150V/1.5A,RDS(ON)=320mΩ@V.
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