AFN3400AS Description
AFN3400AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23 ) AFN3400AS 30V N-Channel Enhancement Mode MOSFET.
AFN3400AS Key Features
- ID=2.8A,RDS(ON)=36mΩ@VGS=10V
- ID=2.5A,RDS(ON)=40mΩ@VGS=4.5V
- ID=2.2A,RDS(ON)=42mΩ@VGS=2.5V
- ID=1.0A,RDS(ON)=60mΩ@VGS=1.8V
- Super high density cell design for extremely
- SOT-23 package design
- Power Management in Note book
- LED Display
- DC-DC System
- LCD Panel