AFN3400S Datasheet | Alfa-MOS

Description AFN3400S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23-3L ) 30V N-Channel Enhancement Mode MOSFET Features 30V/4.0A,RDS(ON)=42mΩ@VGS=10V 30V/3.0A,RDS(ON)=44mΩ@VGS=4.5V 30V/2.6A,RDS(ON)=50mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) SOT-23-3L package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFN3400SS23RG 0SYW SOT-23-3L ϡʳ 0S parts code ϡʳ Y year code ( 0 ~ 9 ) ϡʳ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ϡʳ AFN3400SS23RG : 7” Tape & Reel ; Pb- Free ;...