AFN3400AS Datasheet | Alfa-MOS

Description AFN3400AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOT-23 ) 30V N-Channel Enhancement Mode MOSFET Features - ID=2.8A,RDS(ON)=36mΩ@VGS=10V - ID=2.5A,RDS(ON)=40mΩ@VGS=4.5V - ID=2.2A,RDS(ON)=42mΩ@VGS=2.5V - ID=1.0A,RDS(ON)=60mΩ@VGS=1.8V - Super high density cell design for extremely low RDS (ON) - SOT-23 package design Application - Power Management in Note book - LED Display - DC-DC System - LCD Panel Pin Define Pin 1 2 3 Symbol G S D Description Gate Source Drain Ordering Information Part Ordering No. Part Marking Package AFN3400ASS23RG 0SYW SOT-23 ※ 0S parts code ※ Y year code ( 0 ~ 9 ) ※ W week code ( A ~ Z = 1 ~ 26 / a ~ z = 27 ~ 52 ) ※ AFN3400ASS23RG : 7” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.F Sep. 2022 Unit Tape & Reel Quantity 3000 EA .alfa-mos. Page 1 Alfa-MOS Technology 30V N-Channel Enhancement Mode...