AFN3416AS mosfet equivalent, n-channel mosfet.
20V/6.5A,RDS(ON)=19mΩ@VGS=4.5V 20V/5.5A,RDS(ON)=24mΩ@VGS=2.5V 20V/5.0A,RDS(ON)=34mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resi.
Pin Description ( SOT-23 )
AFN3416AS
20V N-Channel Enhancement Mode MOSFET
Features
20V/6.5A,RDS(ON)=19mΩ@VGS=4.5V 20V.
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