AFN3442W mosfet equivalent, n-channel mosfet.
120V/2.0A,RDS(ON)=560mΩ@VGS=10V 120V/2.0A,RDS(ON)=580mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC curren.
Pin Description ( SOT-23-6L )
AFN3442W
120V N-Channel Enhancement Mode MOSFET
Features
120V/2.0A,RDS(ON)=560mΩ@VGS=10V.
AFN3442W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other ba.
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