AFN3468W mosfet equivalent, n-channel mosfet.
150V/1.5A,RDS(ON)=320mΩ@VGS=10V 150V/1.4A,RDS(ON)=340mΩ@VGS=6V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current .
Pin Description ( SOT-23-6L )
AFN3468W
150V N-Channel Enhancement Mode MOSFET
Features
150V/1.5A,RDS(ON)=320mΩ@VGS=10V.
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