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Alfa-MOS

AFN4062S Datasheet Preview

AFN4062S Datasheet

N-Channel Enhancement Mode MOSFET

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Alfa-MOS
Technology
General Description
AFN4062S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( SOP-8P )
AFN4062S
60V N-Channel
Enhancement Mode MOSFET
Features
z 60V/20A,RDS(ON)= 4.8m@VGS=10V
z 60V/15A,RDS(ON)= 6.0m@VGS=6.0V
z 60V/10A,RDS(ON)= 7.5m@VGS=4.5V
z Super high density cell design for extremely
low RDS (ON)
z SOP-8P package design
Application
z DC/DC Primary Side Switch
z Industrial
z Synchronous Rectification
z Load Switch
z DC/DC Converters
z DC/AC Inverters
Pin Define
Pin
1~3
4
5~8
Symbol
S
G
D
Description
Source
Gate
Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFN4062SS8RG
4062S
SOP-8P
A Lot code
B Date code
AFN4062SS8RG : 13” Tape & Reel ; Pb- Free ; Halogen –Free
©Alfa-MOS Technology Corp.
Rev.A Jan. 2018
Unit
Tape & Reel
Quantity
2500 EA
www.alfa-mos.com
Page 1




Alfa-MOS

AFN4062S Datasheet Preview

AFN4062S Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

Alfa-MOS
Technology
AFN4062S
60V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Rating
(TA=25Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
TA=25
TA=70
TA=25
Single Pulse Avalanche Current
L=0.1mH
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Maximum Junction-to-Foot (Drain)
TA=25
TA=75
t 10 s
Steady-State
Symbol
VDSS
VGSS
IDSM
IDM
IS
IAS
EAS
PD
TJ
TSTG
RθJA
RθJF
Typical
60
±20
22
18
150
3.2
25
30
3.5
2.2
150
-55/150
29
13
Unit
V
V
A
mJ
W
/W
Electrical Characteristics
(TA=25Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Jan. 2018
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=48V,VGS=0V
VDS=48V,VGS=0V
TJ=85
VDS≧5V,VGS=10V
VGS=10V,ID=20A
VGS=6.0V,ID=15A
VGS=4.5V,ID=10A
VDS=15V,ID=20A
IS=20A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=30V,VGS=4.5V
ID10A
VDS=30V,VGS=0V
f=1MHz
VDD=30V,RL=30
ID10A,VGEN=10V
RG=1
Min. Typ Max. Unit
60
1.0
2.5 V
±100 nA
1
30 uA
30 A
3.7 4.8
4.6 6.0 m
5.8 7.5
80 S
0.8 1.3 V
18 35
9 nC
6
3175
1250
pF
100
20 40
10
30
20
60
ns
10 20
www.alfa-mos.com
Page 2



Part Number AFN4062S
Description N-Channel Enhancement Mode MOSFET
Maker Alfa-MOS
Total Page 6 Pages
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