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AFN4062S - N-Channel MOSFET

Download the AFN4062S datasheet PDF (AFN4062S-Alfa included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel mosfet.

Description

AFN4062S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • z 60V/20A,RDS(ON)= 4.8mΩ@VGS=10V z 60V/15A,RDS(ON)= 6.0mΩ@VGS=6.0V z 60V/10A,RDS(ON)= 7.5mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z SOP-8P package design.

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Note: The manufacturer provides a single datasheet file (AFN4062S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN4062S
Manufacturer Alfa-MOS
File Size 328.43 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN4062S Datasheet

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN4062S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4062S 60V N-Channel Enhancement Mode MOSFET Features z 60V/20A,RDS(ON)= 4.8mΩ@VGS=10V z 60V/15A,RDS(ON)= 6.0mΩ@VGS=6.0V z 60V/10A,RDS(ON)= 7.5mΩ@VGS=4.
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