AFN4058WS Datasheet | Alfa-MOS

Alfa-MOS Technology General Description AFN4058WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) 100V N-Channel Enhancement Mode MOSFET Features 100V/9A,RDS(ON)= 42mΩ@VGS=10V 100V/8A,RDS(ON)= 46mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application DC/DC Primary Side Switch Tele/Server Industrial Synchronous Rectification Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D...