AFN4062S Datasheet | Alfa-MOS

Alfa-MOS Technology General Description AFN4062S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) 60V N-Channel Enhancement Mode MOSFET Features z 60V/20A,RDS(ON)= 4.8mΩ@VGS=10V z 60V/15A,RDS(ON)= 6.0mΩ@VGS=6.0V z 60V/10A,RDS(ON)= 7.5mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z SOP-8P package design Application z DC/DC Primary Side Switch z Industrial z Synchronous Rectification z Load Switch z...