AFN4116WS Datasheet | Alfa-MOS

Alfa-MOS Technology General Description AFN4116WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) 20V N-Channel Enhancement Mode MOSFET Features 20V/ 15A,RDS(ON)=8.5mΩ@VGS=4.5V 20V/ 12A,RDS(ON)=11mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Synchronous Buck - Low Side Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Source Source Source Gate Drain...