AFN4172WS Description
AFN4172WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4172WS 30V N-Channel Enhancement Mode MOSFET.
AFN4172WS Key Features
- 30V/15A,RDS(ON)=12mΩ@VGS=10V
- 30V/13A,RDS(ON)=15mΩ@VGS=4.5V
- Super high density cell design for extremely
- SOP-8P package design
- DC/DC Converter
- Load Switch
- Power Management in Notebook puter