Datasheet4U Logo Datasheet4U.com

AFN4154WS - N-Channel MOSFET

Download the AFN4154WS datasheet PDF. This datasheet also covers the AFN4154WS-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

AFN4154WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Key Features

  • 40V/8A,RDS(ON)= 33mΩ@VGS=10V 40V/6A,RDS(ON)= 38mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN4154WS-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN4154WS
Manufacturer Alfa-MOS
File Size 554.16 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN4154WS Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AFN2308AS23RG N-Channel 60V MOSFET VBsemi
AFND1208U1 512Mbit (64M x 8-Bit)NAND FLASH ATO
AFND1G08U3 1G-bit NAND FLASH ATO

Other Datasheets by Alfa-MOS

Part Number Description
AFN4116WS N-Channel MOSFET
AFN4124WS N-Channel MOSFET
AFN4126S N-Channel MOSFET
AFN4134W N-Channel MOSFET
AFN4172WS N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN4154WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOP-8P ) AFN4154WS 40V N-Channel Enhancement Mode MOSFET Features 40V/8A,RDS(ON)= 33mΩ@VGS=10V 40V/6A,RDS(ON)= 38mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) SOP-8P package design Application Low Current DC/DC Conversion Load Switch CCFL Inverter Power Management in Notebook Computer Pin Define Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Ordering Information Part Ordering No.