AFN4172WS Datasheet, Alfa-MOS

* 30V/15A,RDS(ON)=12mΩ@VGS=10V
* 30V/13A,RDS(ON)=15mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* SOP-8P package design Applic.

Pin Description ( SOP-8P ) AFN4172WS 30V N-Channel Enhancement Mode MOSFET Features
* 30V/15A,RDS(ON)=12mΩ@VGS=10V.

AFN4172WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial i.